Localization of excitons and Anderson transition in ZnSe1-xTex solid solutions
- 31 October 1984
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 52 (1), 13-16
- https://doi.org/10.1016/0038-1098(84)90708-7
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Localized Excitons in CdS1−xSex Solid SolutionsPhysica Status Solidi (b), 1982
- Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductorPhysical Review B, 1982
- Isoelectronic Impurity Te in CdS1−xSex Mixed CrystalsPhysica Status Solidi (b), 1982
- CdS1−xTex as Persistence‐type Semiconductor Mixed CrystalsPhysica Status Solidi (b), 1981
- Evidence for Exciton Localization by Alloy Fluctuations in Indirect-GapPhysical Review Letters, 1980
- Luminescence Excitation Spectra and Their Exciton Structures of ZnS Phosphors. II. Al and Te Doped PhosphorsJapanese Journal of Applied Physics, 1980
- Compositional fluctuation‐induced broadening of bound‐exciton lines in II–VI semiconductor mixed crystalsPhysica Status Solidi (b), 1979
- Gigantic oscillator strengths inherent in exciton complexesPublished by Springer Nature ,1975
- Mechanism of Charge Transport and Light Emission in ZnSexTe1−x p-n JunctionsJournal of Applied Physics, 1967
- Anomalous Variation of Band Gap with Composition in Zinc Sulfo- and Seleno-TelluridesPhysical Review B, 1957