Monte Carlo investigation of transient hole transport in GaAs

Abstract

Transient transport of holes in GaAs is studied under the conditions of high energy injection. This study is made using a Monte Carlo simulation with the unique inclusion of a realistic band structure based on the K*P method. The results reported herein show that a significant velocity overshoot occurs at low applied electric fields over distances greater than 1500 Å. As the applied field increases, the effect of the overshoot upon the transit time becomes less pronounced. There is no discernable gain in the drift velocity for holes injected at high energy, 0.1 eV, as compared to holes injected at zero launching energy for the distances considered here.