Monitoring of SIMOX layer properties and implantation temperature by optical measurements
- 1 October 1987
- journal article
- letter
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 2 (10), 687-690
- https://doi.org/10.1088/0268-1242/2/10/011
Abstract
Infrared absorption and Raman scattering measurements of SIMOX structures implanted at various temperatures yield information on the structure and the strain in both the top silicon and the buried oxide layers. Both techniques can also be used to monitor the implant temperature after the implantation.Keywords
This publication has 17 references indexed in Scilit:
- Promotion of practical SIMOX technology by the development of a 100 mA-class high-current oxygen implanterElectronics Letters, 1986
- Effects of implantation temperature on the properties of buried oxide layers in silicon formed by oxygen ion implantationApplied Physics Letters, 1984
- Silicon on Insulator by High Dose ImplantationMRS Proceedings, 1984
- Crystalline quality of silicon layer formed by FIPOS technologyJournal of Crystal Growth, 1983
- SOI by CVD: Epitaxial Lateral Overgrowth (ELO) process—ReviewJournal of Crystal Growth, 1983
- Growth of Si on insulators using electron beamsJournal of Crystal Growth, 1983
- Laser crystallization of thin Si films on amorphous insulating substratesJournal of Crystal Growth, 1983
- Growth Process of Silicon Over SiO2 by CVD: Epitaxial Lateral Overgrowth TechniqueJournal of the Electrochemical Society, 1983
- Electric-field-shielding layers formed by oxygen implantation into siliconElectronics Letters, 1983
- C.M.O.S. devices fabricated on buried SiO2 layers formed by oxygen implantation into siliconElectronics Letters, 1978