Temperature dependence of threshold current for coupled multiple quantum-well In1−xGax P1−zAsz-InP heterostructure laser diodes
- 1 May 1980
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (5), 2402-2405
- https://doi.org/10.1063/1.328009
Abstract
No abstract availableKeywords
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