Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm

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Abstract
Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 μm was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 1.0 Å/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.