Metallization systems for silicon integrated circuits
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 57 (9), 1580-1586
- https://doi.org/10.1109/proc.1969.7339
Abstract
An investigation into single and composite layered metallization systems is described with respect to their limitations, possible failure mechanisms, and problems encountered in fabrication. Systems investigated include metals such as chromium, titanium, tungsten, and molybdenum in conjunction with gold. Comparisons are made to conventional aluminum with respect to ohmic contact to silicon, metallurgical reactions, behavior in adverse environmental conditions, method of deposition, and processing difficulties.Keywords
This publication has 6 references indexed in Scilit:
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