A new large-signal model based on pulse measurement techniques for RF power MOSFET
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Silicon MOSFETs, the microwave device technology for the 1990sPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Modeling a new generation of RF devices: MOSFETs for L-band applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Extracting small-signal model parameters of silicon MOSFET transistorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel, accurate load-pull setup allowing the characterization of highly mismatched power transistorsIEEE Transactions on Microwave Theory and Techniques, 1994
- Nonlinear MOSFET model for the design of RF power amplifiersIEE Proceedings G Circuits, Devices and Systems, 1992
- A new method for determining the FET small-signal equivalent circuitIEEE Transactions on Microwave Theory and Techniques, 1988
- Negative differential output conductance of self heated power MOSFETsIEE Proceedings I Solid State and Electron Devices, 1986