Limits of depth resolution for sputter sectioning: A secondary ion mass spectrometry investigation of 63Ni in nickel
- 1 October 1989
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 43 (4), 507-512
- https://doi.org/10.1016/0168-583x(89)90398-4
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Point defect sinks in self-ion-irradiated nickel: A self-diffusion investigationJournal of Applied Physics, 1988
- Energetic Displacement Cascades and Their Roles in Radiation EffectsMaterials Science Forum, 1987
- Depth resolution in SIMS: Experimental investigation of Ni and In in CuNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1986
- Kinetic processes during ion bombardmentNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Temperature effects in atomic mixing of metal-silicon multilayers measured by SIMSNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1985
- Direct measurement of small diffusion coefficients with secondary ion mass spectroscopyJournal of Applied Physics, 1982
- Theoretical assessments of major physical processes involved in the depth resolution in sputter profilingRadiation Effects, 1982
- A first order diffusion approximation to atomic redistribution during ion bombardment of solids, II. finite range approximationRadiation Effects, 1981
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- The depth resolution of sputter profilingApplied Physics A, 1979