Production and beam annealing of damagein carbon implanted silicon. II

Abstract

The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H⁺ and He⁺ beams in the energy interval 30-200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H⁺ or He⁺ impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction.