Gold as a recombination centre in silicon
- 1 August 1965
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 8 (8), 685-691
- https://doi.org/10.1016/0038-1101(65)90036-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Resistivity of Bulk Silicon and of Diffused Layers in SiliconBell System Technical Journal, 1962
- Electrical Properties of Gold-Doped Diffused Silicon Computer DiodesBell System Technical Journal, 1960
- Recombination Properties of Gold in SiliconPhysical Review B, 1958
- Electron-Hole Recombination Statistics in Semiconductors through Flaws with Many Charge ConditionsPhysical Review B, 1958
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957
- Properties of Gold-Doped SiliconPhysical Review B, 1957
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952