Infrared absorption by sulfur-doped silicon formed by femtosecond laser irradiation
Top Cited Papers
- 23 June 2004
- journal article
- research article
- Published by Springer Nature in Applied Physics A
- Vol. 79 (7), 1635-1641
- https://doi.org/10.1007/s00339-004-2676-0
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Comparison of structure and properties of femtosecond and nanosecond laser-structured siliconApplied Physics Letters, 2004
- Infrared absorption by conical silicon microstructures made in a variety of background gases using femtosecond-laser pulsesJournal of Applied Physics, 2003
- Near-unity below-band-gap absorption by microstructured siliconApplied Physics Letters, 2001
- Silicon microcolumn arrays grown by nanosecond pulsed-excimer laser irradiationApplied Physics Letters, 1999
- Microstructuring of silicon with femtosecond laser pulsesApplied Physics Letters, 1998
- Absorption edge, band tails, and disorder of amorphous semiconductorsPhysical Review B, 1996
- Solid Phase Epitaxial Regrowth of Microcrystalline Si Films on a (100) Si SubstrateMRS Proceedings, 1988
- Depth distributions of sulfur implanted into silicon as a function of ion energy, ion fluence, and anneal temperatureJournal of Applied Physics, 1984
- High-resolution studies of sulfur- and selenium-related donor centers in siliconPhysical Review B, 1984
- Determination of deep energy levels in Si by MOS techniquesApplied Physics Letters, 1972