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Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO
2
Interface
Home
Publications
Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO
2
Interface
Calculations of Energy Levels of Oxygen and Silicon Vacancies at the Si-SiO
2
Interface
TI
Tetsuya Iizuka
Tetsuya Iizuka
TS
Takuo Sugano
Takuo Sugano
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1 January 1973
journal article
Published by
IOP Publishing
in
Japanese Journal of Applied Physics
Vol. 12
(1)
,
73-79
https://doi.org/10.1143/jjap.12.73
Abstract
No abstract available
Keywords
PERTURBATION THEORY
BAND STRUCTURE
ENERGY LEVELS
ENERGY GAP
Cited by 17 articles