Dependence of Zn diffusion on the Al content in Ga1−xAlxAs
- 1 June 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6), 905-907
- https://doi.org/10.1016/0038-1101(78)90318-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
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- Transverse-junction-stripe-geometry double-heterostructure lasers with very low threshold currentJournal of Applied Physics, 1974
- A GaAs-AlxGa1-xAs Double Heterostructure Planar Stripe LaserJapanese Journal of Applied Physics, 1973
- Efficient Electroluminescence from Zinc-Diffused Ga1−xAlxAs Diodes at 25°CApplied Physics Letters, 1971
- Diffusion of Zn into GaAs under the Presence of Excess Arsenic VaporJournal of Applied Physics, 1964
- Diffusion Mechanism of Zn in GaAs and GaP Based on Isoconcentration Diffusion ExperimentsJournal of Applied Physics, 1964