Electronic structure of isolated single vacancy centres in silicon carbide
- 1 June 1970
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 3 (6), L112-L113
- https://doi.org/10.1088/0022-3719/3/6/025
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Ab Initio Computations in Atoms and MoleculesIBM Journal of Research and Development, 1965
- Colour centres in irradiated diamonds. IProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1957
- The measure of electronegativityTransactions of the Faraday Society, 1953
- Calculations of the Lower Excited Levels of BenzeneThe Journal of Chemical Physics, 1938