Quantum dot field effect transistors
Top Cited Papers
Open Access
- 1 September 2013
- journal article
- Published by Elsevier in Materials Today
- Vol. 16 (9), 312-325
- https://doi.org/10.1016/j.mattod.2013.08.011
Abstract
No abstract availableKeywords
Funding Information
- Research Grants Council of the Hong Kong S.A.R., China (102412, 102810, 4055012, 9667067)
- Applied Research Grant of City University of Hong Kong
- National Science Foundation of China (A.03.13.01401)
This publication has 131 references indexed in Scilit:
- Stoichiometry Control in Quantum Dots: A Viable Analog to Impurity Doping of Bulk MaterialsACS Nano, 2013
- PbSe Quantum Dot Field-Effect Transistors with Air-Stable Electron Mobilities above 7 cm2 V–1 s–1Nano Letters, 2013
- Stoichiometric Control of Lead Chalcogenide Nanocrystal Solids to Enhance Their Electronic and Optoelectronic Device PerformanceACS Nano, 2013
- Polyhedral Oligomeric Silsesquioxane as a Ligand for CdSe Quantum DotsThe Journal of Physical Chemistry C, 2013
- Photoconductivity of PbSe Quantum-Dot Solids: Dependence on Ligand Anchor Group and LengthACS Nano, 2012
- N‐Type Colloidal‐Quantum‐Dot Solids for PhotovoltaicsAdvanced Materials, 2012
- Bias-Stress Effect in 1,2-Ethanedithiol-Treated PbS Quantum Dot Field-Effect TransistorsACS Nano, 2012
- Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistorsNature Communications, 2012
- Role of mid-gap states in charge transport and photoconductivity in semiconductor nanocrystal filmsNature Communications, 2011
- Colloidal-quantum-dot photovoltaics using atomic-ligand passivationNature Materials, 2011