Highly Stable ZnO Thin Films by Atomic Layer Deposition
- 1 October 1998
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 37 (10A), L1125-1128
- https://doi.org/10.1143/jjap.37.l1125
Abstract
B-doped ZnO films were prepared on Corning 7059 glass by atomic layer deposition (ALD) using diethylzinc (DEZn) and H2O as reactant gases, and diborane (B2H6) as the dopant gas. The stability of the electrical properties of the obtained ZnO films was investigated. Variations in the electrical properties of the ZnO films with air exposure and heat treatment were observed. The stability of the electrical properties of the ZnO films grown by metalorganic vapor deposition (MOCVD) and photo-MOCVD was also investigated. It was found that the electrical properties of ZnO films grown by ALD were very stable, indicating that the ALD technique is attractive for the deposition of high-quality transparent conducting ZnO films.Keywords
This publication has 7 references indexed in Scilit:
- Textured ZnO Thin Films for Solar Cells Grown by a Two-step Process with the Atomic Layer Deposition TechniqueJapanese Journal of Applied Physics, 1998
- Growth of boron-doped ZnO thin films by atomic layer depositionSolar Energy Materials and Solar Cells, 1997
- Growth of Transparent Conductive Oxide ZnO Films by Atomic Layer DepositionJapanese Journal of Applied Physics, 1996
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1993
- Electrical and optical properties of boron-doped ZnO thin films for solar cells grown by metalorganic chemical vapor depositionJournal of Applied Physics, 1991
- Indium-doped zinc oxide films as transparent electrodes for solar cellsSolar Energy Materials, 1988
- Properties of zinc oxide films prepared by the oxidation of diethyl zincJournal of Applied Physics, 1981