Landau theory of domain wall magnetoelectricity
- 30 June 2010
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 81 (22), 224118
- https://doi.org/10.1103/physrevb.81.224118
Abstract
We calculate the exact analytical solution to the domain wall properties in a generic multiferroic system with two order parameters that are coupled biquadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as , with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films of this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magnetoelectric devices based on domain walls rather than bulk properties.
Keywords
All Related Versions
This publication has 41 references indexed in Scilit:
- Physics and Applications of Bismuth FerriteAdvanced Materials, 2009
- Formation of magnetite in bismuth ferrrite under voltage stressingApplied Physics Letters, 2007
- Influence of parasitic phases on the properties of BiFeO3 epitaxial thin filmsApplied Physics Letters, 2005
- Comment on "Epitaxial BiFeO 3 Multiferroic Thin Film Heterostructures"Science, 2005
- Magnetoelectric behavior of domain walls in multiferroicPhysical Review B, 2004
- Structure and Interaction of Antiferromagnetic Domain Walls in HexagonalPhysical Review Letters, 2003
- Epitaxial BiFeO 3 Multiferroic Thin Film HeterostructuresScience, 2003
- Pyromagnetic domain walls connecting antiferromagnetic non-ferroelastic magnetoelectric domainsFerroelectrics, 1997
- Order parameter coupling and chirality of domain wallsJournal of Physics: Condensed Matter, 1991
- Temperature dependence of the crystal and magnetic structures of BiFeO3Journal of Physics C: Solid State Physics, 1980