N-channel field effect transistors with fullerene thin films and their application to a logic gate circuit
- 26 September 2003
- journal article
- research article
- Published by Elsevier in Chemical Physics Letters
- Vol. 379 (3-4), 223-229
- https://doi.org/10.1016/j.cplett.2003.07.025
Abstract
No abstract availableKeywords
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