Effect of temperature on exciton trapping on interface defects in GaAs quantum wells
- 15 February 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 31 (4), 2497-2498
- https://doi.org/10.1103/physrevb.31.2497
Abstract
We present investigations of the temperature dependence of the luminescence and excitation spectra in a GaAs single quantum well grown by metal-organic chemical-vapor deposition. The results support our previous interpretation of the luminescence line at low temperature in terms of exciton trapping on interface defects.Keywords
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