Influence of AlAs mole fraction on the electron mobility of (Al,Ga)As/GaAs heterostructures
- 1 February 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (2), 1028-1029
- https://doi.org/10.1063/1.330513
Abstract
Single period (Al,Ga)As/GaAs heterostructures with doped (Al,Ga)As layers were prepared and characterized by Van der Pauw-Hall measurements between 10 and 300 K. The mobility and the concentration of the two dimensional electron gas at the heterojunction interface were studied with varying x AlAs mole fraction. The electron mobility goes through a peak at about the direct-indirect transition, x = 0.38 while the carrier concentration steadily decreases up to x = 0.38. Electron mobilities of 100 000 and 200 000 cm2/Vs were measured at 77 and 10 K, respectively. These results represent the best mobilities reported to date in single period structures.Keywords
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