Properties of 2 µm bubbles garnet films
- 1 September 1978
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 14 (5), 415-417
- https://doi.org/10.1109/tmag.1978.1059893
Abstract
2 μm bubbles Ga, Al or (Ca,Ge) substituted (EuLu)3Fe5O12and (YSmLuCa)3(FeGe)5O12garnet films were grown by liquid phase epitaxy on Gd3Ga5O12substrates. The compositions of the films were varied by modifying the composition of the growth solution. The magnetic properties of the films with 1 = 0,27 ± 0,03μm were discussed. The two compositions (EuLuCa)3(FeGe)5O12and (YSmLuCa)3(FeGe)5O12present a sufficient temperature stability from - 20 to + 80°C to be used in memory devices.Keywords
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