Transmission through optically generated inductive grid arrays

Abstract
Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.A technique is developed for generating pseudometallic plasma inductive grid arrays within a semiconductor wafer. The induced plasma elements are defined by a surface impedance which is discussed. Results of an investigation into the transmission properties of a variety of array designs between 16 and 40 GHz are presented. Measurements are performed on a silicon wafer illuminated by an external optical source via a negative image mas