Electrical properties of n-type Si layers doped with proton bombardment induced shallow donors
- 31 July 1972
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 11 (1), 263-266
- https://doi.org/10.1016/0038-1098(72)91173-8
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Shallow Donor State Produced by Proton Bombardment of SiliconJapanese Journal of Applied Physics, 1971
- A NEW METHOD FOR DETERMINATION OF DEEP-LEVEL IMPURITY CENTERS IN SEMICONDUCTORSApplied Physics Letters, 1970
- CHANNELING STUDY OF BORON-IMPLANTED SILICONApplied Physics Letters, 1970
- A technique for directly plotting the inverse doping profile of semiconductor wafersIEEE Transactions on Electron Devices, 1969
- Theory of Interstitial Impurity States in SemiconductorsPhysical Review B, 1958
- Theory of the Ionization of Hydrogen and Lithium in Silicon and GermaniumThe Journal of Chemical Physics, 1956