High-power-density single-mode operation of GaAs-GaAlAs TJS lasers utilizing Si3N4 plasma deposition for facet coating
- 1 May 1979
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (5), 3743-3745
- https://doi.org/10.1063/1.326281
Abstract
A new method of laser diode facet coating, plasma deposition of Si3N4 film, has been developed. Utilizing it, laser diodes which operate at 4 mW/μm power density in single longitudinal and fundamental transverse mode for more than 1000 h have been realized.Keywords
This publication has 9 references indexed in Scilit:
- Accelerated step-temperature aging of AlxGa1−xAs heterojunction laser diodesApplied Physics Letters, 1978
- Degradation of (AlGa)As DH lasers due to facet oxidationApplied Physics Letters, 1978
- 13 μm wide stripe c.w. GaAs/GaAlAs d.h. lasers linear to more than 10 mWElectronics Letters, 1978
- Continuously operated (Al,Ga)As double-heterostructure lasers with 70 °C lifetimes as long as two yearsApplied Physics Letters, 1977
- Effects of facet coatings on the degradation characteristics of GaAs-Ga1−xAlxAs DH lasersApplied Physics Letters, 1977
- Long-term degradation of GaAs-Ga1−xAlxAs DH lasers due to facet erosionJournal of Applied Physics, 1977
- GaAs lasers with consistently low degradation rates at room temperatureApplied Physics Letters, 1977
- Improved light-output linearity in stripe-geometry double-heterostructure (Al,Ga)As lasersApplied Physics Letters, 1976
- Transverse-junction-stripe lasers with a GaAs p-n homojunctionIEEE Journal of Quantum Electronics, 1975