33-GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifier
- 1 January 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Solid-State Circuits
- Vol. 26 (10), 1378-1382
- https://doi.org/10.1109/4.90089
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- GaAs heterojunction bipolar transistor MMIC DC to 10 GHz direct-coupled feedback amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- Silicon bipolar fixed and variable gain amplifier MMICs for microwave and lightwave applications up to 6 GHzPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- A monolithic 3 to 40 GHz HEMT distributed amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2003
- 33 GHz monolithic cascode AlInAs/GaInAs heterojunction bipolar transistor feedback amplifierPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- AlInAs/GaInAs HBT IC technologyIEEE Journal of Solid-State Circuits, 1991
- GaAlAs/GaAs heterojunction bipolar transistors: issues and prospects for applicationIEEE Transactions on Electron Devices, 1989