High quality polysilicon by amorphous low pressure chemical vapor deposition
- 1 February 1983
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 42 (3), 249-251
- https://doi.org/10.1063/1.93904
Abstract
Undoped and in situ phosphorus-doped low pressure chemical vapor deposited polysilicon films have been studied by various structural analysis and optical techniques as a function of deposition temperature. Polysilicon films of high quality can only be obtained by deposition in the amorphous phase and subsequent crystallization.Keywords
This publication has 2 references indexed in Scilit:
- Structure and Properties of LPCVD Silicon FilmsJournal of the Electrochemical Society, 1980
- Measurement of the correlation between the specular reflectance and surface roughness of Ag filmsPhysical Review B, 1976