Carrier Extraction in Germanium
- 1 January 1955
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society. Section B
- Vol. 68 (1), 43-50
- https://doi.org/10.1088/0370-1301/68/1/307
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- Measurement of Minority Carrier Lifetime and Contact Injection Ratio on Transistor MaterialsProceedings of the Physical Society. Section B, 1954
- Drift Mobilities in Semiconductors. I. GermaniumPhysical Review B, 1953
- Experimental Confirmation of Relation between Pulse Drift Mobility and Charge Carrier Drift Mobility in GermaniumPhysical Review B, 1953
- The Temperature Dependence of Drift Mobility in GermaniumPhysical Review B, 1953
- Semiconductor circuit elementsReports on Progress in Physics, 1953
- Carrier Injection and Extraction in Lead SulphideProceedings of the Physical Society. Section B, 1953
- Statistics of the Recombinations of Holes and ElectronsPhysical Review B, 1952
- The Elastic Constants of Germanium Single CrystalsPhysical Review B, 1950
- Hole Injection in Germanium-Quantitative Studies and Filamentary Transistors*Bell System Technical Journal, 1949