Planar InGaAs PIN photodetectors grown by metalorganic chemical vapour deposition

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Abstract
Planar InGaAs/InP heterostructure PIN photodiodes have been fabricated from structures grown by atmospheric-pressure metalorganic chemical vapour deposition. Diffused p-n junction devices of 75 μm diameter have low dark currents (~10 nA at −10 V), good quantum efficiencies (~50% without AR coatings) and response times less than 40 ps.