Evidence for germanium phosphide dots on Ge(001)
- 1 May 1999
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 17 (3), 698-703
- https://doi.org/10.1116/1.581689
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
- The physical origin of InAs quantum dots on GaAs(001)Applied Physics Letters, 1998
- CoPt–C nanogranular magnetic thin filmsApplied Physics Letters, 1997
- Room temperature observation of single electron tunneling effect in self-assembled metal quantum dots on a semiconductor substrateApplied Physics Letters, 1997
- Self-assembled InAs islands on GaAs(111) substratesSurface Science, 1997
- Scanning tunneling microscopy of semiconductor surfacesSurface Science Reports, 1996
- Optical Observation of Single-Electron Charging Effect at Room TemperatureJapanese Journal of Applied Physics, 1996
- Visible light emission spectra of individual microstructures of porous SiApplied Physics Letters, 1995
- STM light emission spectroscopy of surface micro-structures on granular Au filmsSurface Science, 1995
- Atomic Resolution in Photon Emission Induced by a Scanning Tunneling MicroscopePhysical Review Letters, 1995
- Photon emission in scanning tunneling microscopy: Interpretation of photon maps of metallic systemsPhysical Review B, 1993