Charge pumping and low-frequency noise in MOS structures
- 16 December 1971
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 8 (2), 545-550
- https://doi.org/10.1002/pssa.2210080225
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
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- SURFACE-STATE RELATED l/f NOISE IN p-n JUNCTIONS AND MOS TRANSISTORSApplied Physics Letters, 1968
- 1/f noise in gate-controlled planar silicon diodesElectronics Letters, 1968
- Surface states and 1/f noise in MOS transistorsIEEE Transactions on Electron Devices, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Evidence of the Surface Origin of theNoisePhysical Review Letters, 1966
- Surface effects on p-n junctions: Characteristics of surface space-charge regions under non-equilibrium conditionsSolid-State Electronics, 1966
- Solid Solubilities of Impurity Elements in Germanium and Silicon*Bell System Technical Journal, 1960