Self-diffusion in silicon as probed by the ( p,γ) resonance broadening method
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 703-705
- https://doi.org/10.1063/1.91261
Abstract
The self‐diffusion preexponential factor D0=8.0 cm2/s and activation energy Q=4.1 eV for intrinsic silicon have been determined with the ( p,γ) resonance broadening method in the temperature region 900–1100 °C, in a first application of this method to self‐diffusion measurements. Its suitability was tested by extending the self‐diffusion measurements to lower temperatures than those performed with other methods.Keywords
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