Quantum well structures of In0.53Ga0.47As/InP grown by hydride vapor phase epitaxy in a multiple chamber reactor

Abstract

A computer controlled multiple chamber chemical vapor deposition reactor, designed for the growth of InP based alloys, has been constructed. In this system, specular epitaxial layers of InP and In_0.53Ga_0.47As are grown in separate chambers. This allows for the uninterrupted growth of In_0.53Ga_0.47As/InP quantum well structures with layer thicknesses of approximately 150 Å. The photoluminescence spectra of these structures exhibit upward energy shifts as large as 71 meV from the band‐gap energy of In_0.53Ga_0.47As. Laser action at 1.5–1.6‐μm wavelengths has been obtained at temperatures up to 100 °C by optical pumping with a Q‐switched neodymium:yttrium aluminum garnet laser.