The effect of pressure on the properties of germanium and silicon
- 1 January 1959
- journal article
- Published by Elsevier in Journal of Physics and Chemistry of Solids
- Vol. 8, 196-204
- https://doi.org/10.1016/0022-3697(59)90315-4
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Dielectric constant of germanium and silicon as a function of volumeJournal of Physics and Chemistry of Solids, 1959
- Optical properties of semiconductors under hydrostatic pressure—IIIJournal of Physics and Chemistry of Solids, 1958
- Optical properties of semiconductors under hydrostatic pressure—II. SiliconJournal of Physics and Chemistry of Solids, 1958
- Optical properties of semiconductors under hydrostatic pressure—I. GermaniumJournal of Physics and Chemistry of Solids, 1958
- Oscillatory Magneto-Absorption of the Direct Transition in GermaniumPhysical Review B, 1957
- Conductivity, Hall Effect, and Magnetoresistance in-Type Germanium, and Their Dependence on PressurePhysical Review B, 1955
- Pressure Dependence of the Resistivity of SiliconPhysical Review B, 1955
- Speculations on the Energy Band Structure of Ge—Si AlloysPhysical Review B, 1954
- Pressure Dependence of the Resistivity of GermaniumPhysical Review B, 1954
- The Resistance of 72 Elements, Alloys and Compounds to 100,000 Kg/Cm²Proceedings of the American Academy of Arts and Sciences, 1952