Pressure-Dependent Electronic Transport in AmorphousAs2Se3

Abstract

Room-temperature pressure studies (<3 kbar) on $a$-${\mathrm{As}}_2$ ${\mathrm{Se}}_3$ reveal that both hole transport, as determined from time-of-flight experiments, and dark dc conductivity increase with hydrostatic pressure as $\exp \left(\alpha p\right)$, where $\alpha \sim 0.45$ ${\mathrm{kbar}}^{-1\mathrm{}}$, independent of sample parameters. The pressure dependence and the shape of the phototransient strongly support the recently proposed stochastic hopping transport. The pressure dependence of the dark conductivity suggests a bulk controlled process.