Short-duration incoherent xenon light exposure has been used to dope silicon single crystals with arsenic or phosphorus from spin-on deposited doped silicon oxide films. Induced temperatures between 1000°C and 1200°C have been applied for exposure times between 10 sec and 30 sec. The diffused layers were characterized by sheet resistivity measurements and Rutherford Backscattering including channeling. Furthermore, solar cells made from these samples were evaluated by spectral response measurements and recording of AM1 current-voltage characteristics. Optimal doping conditions are discussed for arsenic and phosphorus in and oriented silicon single crystals with respect to deposited film thickness, exposure time, and induced temperature