Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

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Abstract
The optical gain characteristics of high Al-content AlGaNquantum wells(QWs) are analyzed for deep UV lasers. The effect of crystal-field split-off hole (CH) and heavy-hole (HH) bands crossover on the gain characteristics of AlGaNQW with AlN barriers is analyzed. Attributing to the strong transition between conduction–CH bands, the TM spontaneous emission recombination rate is enhanced significantly for high Al-content AlGaNQWs. Large TM-polarized material gain is shown as achievable for high Al-content AlGaNQWs, which indicates the feasibility of TM lasing for lasers emitting at ∼ 220 – 230 nm .