The conduction band structures of GaAs and InP

Abstract

The available experimental data on the conduction band structure of GaAs and InP is reviewed. The sub-band energy gaps and density of states in the minima involved in the high electric field transferred electron effect are discussed and preferred values given. The X_1C- Gamma _1C gaps in both GaAs and InP apparently increase at low temperatures. High pressure Hall effect data on InP are analysed in terms of possible pressure coefficients, effective masses, and energy gaps. The effective masses in the X_1C and L_1C minima are higher than expected from direct comparisons with other III-V compounds, but are in general agreement with the basic predictions of k.p theory.