The observed trapping parameters of photoexcited carriers in germanium and silicon
- 1 January 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 26 (4), 148-149
- https://doi.org/10.1016/0375-9601(68)90048-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
- Low-Temperature Recombination of Electrons and Donors in-Type Germanium and SiliconPhysical Review B, 1967
- Effect of Impurity Conduction on Electron Recombination in Germanium and Silicon at Low TemperaturesPhysical Review B, 1966
- Photoexcited Electron Capture by Ionized and Neutral Shallow Impurities in Silicon at Liquid-Helium TemperaturesPhysical Review B, 1966
- Low temperature electron trapping lifetimes and extrinsic photoconductivity in n-type silicon doped with shallow impuritiesJournal of Physics and Chemistry of Solids, 1961
- Steady-State Distribution Function in Dilute Electron GasesPhysical Review B, 1960
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960