Diffusion and oxide masking in silicon by the box method
- 31 March 1960
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 1 (1), 3-12
- https://doi.org/10.1016/0038-1101(60)90051-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Evaluation of the Surface Concentration of Diffused Layers in SiliconBell System Technical Journal, 1958
- Diffusion of Antimony Out of Germanium and Some Properties of the Antimony-Germanium SystemPhysical Review B, 1957
- Surface Protection and Selective Masking during Diffusion in SiliconJournal of the Electrochemical Society, 1957
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956
- Vaporization of Inorganic Substances: B2O3, TeO2 and Mg3N2The Journal of Physical Chemistry, 1955
- Diffusion of Boron and Phosphorus into SiliconJournal of Applied Physics, 1954