A Radiation-Hardened 16K-BIT MNOS EAROM

1 January 1983

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science

Vol. 30 (6), 4224-4228
https://doi.org/10.1109/tns.1983.4333112

Abstract

A radiation-hardened silicon-gate CMOS/NMNOS 16K-bit EAROM has been designed, fabricated, and evaluated. This memory has been designed to be used as a ROM replacement in radiation-hardened microprocessor-based systems.

Keywords

EPROM
CMOS TECHNOLOGY
THRESHOLD VOLTAGE
ELECTRON TRAPS
CMOS MEMORY CIRCUITS
SILICON
LABORATORIES
READ ONLY MEMORY
REGISTERS

This publication has 1 reference indexed in Scilit:

A 16 kbit electrically erasable PROM using n-channel Si-gate MNOS technology
IEEE Journal of Solid-State Circuits, 1980

Cited by 5 articles