Structure Analysis of the NiSi2/(111)Si Interface by the X-Ray Standing Wave Method
- 1 December 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (12A), L798
- https://doi.org/10.1143/jjap.22.l798
Abstract
The atomic structure of the NiSi2/(111)Si interface was investigated by the X-ray standing wave method using synchrotron radiation at Photon Factory. The angular yield of Ni K fluorescent X-rays was measured around the Bragg peak of a substrate Si. By comparing the profile of the experimental curve with that of calculated one, the interface atomic structure was determined.Keywords
This publication has 7 references indexed in Scilit:
- Atomic structure of the NiSi2/(111)Si interfacePhilosophical Magazine A, 1982
- Cross-sectional transmission electron microscopy of silicon-silicide interfacesJournal of Applied Physics, 1981
- X-Ray Standing Waves at Crystal SurfacesPhysical Review Letters, 1980
- Observation of internal x-ray wave fields during Bragg diffraction with an application to impurity lattice locationPhysical Review B, 1974
- Dynamical Diffraction of X Rays by Perfect CrystalsReviews of Modern Physics, 1964
- Effect of Dynamical Diffraction in X-Ray Fluorescence ScatteringPhysical Review B, 1964
- Effect of the Angular Velocity on the Sedimentation Constant of Rod-like Macromolecules in the UltracentrifugeJapanese Journal of Applied Physics, 1963