Characteristics and applications of domains in semiconducting CdS

1 October 1967

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 14 (10), 663-668
https://doi.org/10.1109/T-ED.1967.16085

Abstract

The characteristics of domains due to electron-phonon coupling in semiconducting CdS are measured using a high resolution probe. The behavior of domains in CdS for applications such as domain originated function generators is discussed and the results are compared with previous work on electron transfer domains in GaAs.

Keywords

ELECTRONS
VOLTAGE
SIGNAL GENERATORS
ANODES
ELECTRON TRANSFER
HELIUM
TUNGSTEN
HIGH RESOLUTION
GALLIUM ARSENIDE

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