Temperature Coefficient of Resistance of the High Pressure Phases of Si, Ge, and Some III–V and II–VI Compounds

Abstract

The temperature coefficient of resistance has been obtained for the high pressure phases of silicon, germanium, and several III–V and II–VI compounds having the zinc-blende or wurtzite structure. The high pressure phases of all zinc-blende compounds were metallic. The high pressure phase of CdS is a semiconductor. Data were also obtained on CdSe at room temperature and as a function of temperature. The transition found optically is also obtained electrically. The resistance-pressure curve for the high pressure phase has considerable structure. It is metallic. An upper limit for the transition pressures of germanium and GaSb at liquid nitrogen temperature was established.