Fatigue and retention of Pb(Zr0.53Ti0.47)O3 thin film capacitors with Pt and RuO2 electrodes
- 1 November 1994
- journal article
- research article
- Published by Taylor & Francis in Integrated Ferroelectrics
- Vol. 5 (3), 185-196
- https://doi.org/10.1080/10584589408017011
Abstract
Pb(Zr0.53Ti0.47)O3 (PZT) thin films were deposited on Pt and RuO2 coated Si and MgO substrates using the sol-gel process. Fatigue and retention tests were performed on these samples. The films grown on RuO2 electrodes are fatigue-free up to nearly 1011 cycles. Their retention life-time extrapolates to more than 1010 seconds. The fatigue behavior of films grown on Pt electrodes depends on the PZT film orientation. Highly oriented (001) PZT films maintain 50% of their initial P∗r-P⁁r value after 1011 cycles. The randomly oriented films maintain less than 3% of the initial P∗r-P⁁r value after 1011 cycles. However, the retention life-time of both highly oriented and randomly oriented PZT films grown on Pt electrodes extrapolates to higher than 1011 seconds. It appears that fatigue of films grown on RuO2 is mainly controlled by the film/electrode interface. On the other hand, fatigue of films grown on Pt appears to depend on both the film/electrode interface as well as on bulk effects.Keywords
This publication has 5 references indexed in Scilit:
- Fatigue of ferroelectric PbZrxTiyO3 capacitors with Ru and RuOx electrodesJournal of Materials Research, 1993
- Fatigue and retention in ferroelectric Y-Ba-Cu-O/Pb-Zr-Ti-O/Y-Ba-Cu-O heterostructuresApplied Physics Letters, 1992
- Fatigue and aging in ferroelectric PbZr0.2Ti0.8O3/YBa2Cu3O7 heterostructuresIntegrated Ferroelectrics, 1992
- Spectroscopic and Microstructural Characterization of Solution Chemistry Effects in Pzt Thin Film ProcessingMRS Proceedings, 1991
- Fatigue and switching in ferroelectric memories: Theory and experimentJournal of Applied Physics, 1990