Backscattering of MeV He4 ions and Seemann-Bohlin x-ray diffraction techniques have been used to study silicide formation on Si and SiO2 covered with evaporated metal films. Backscattering techniques provide information on the composition of thin-film structures as a function of depth. The glancing-angle x-ray technique provides identification of phases and structural information. Examples are given of V on Si and on SiO2 to illustrate the major features of these analysis techniques. We also give a general review of recent studies of silicide formation.