Proton-implanted optical waveguide detectors in GaAs

Abstract

Defect levels introduced by implanting GaAs with high‐energy protons give rise to optical absorption at wavelengths greater than that of the normal absorption edge at 0.9 μ. Optical waveguide detectors may be fabricated by taking advantage of this absorption mechanism in the presence of a Schottky barrier depletion layer. Detector response times less than 200 ns and external quantum efficiencies of 16% have been observed.