Laser action in GaN pyramids grown on (111) silicon by selective lateral overgrowth
- 19 October 1998
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 73 (16), 2242-2244
- https://doi.org/10.1063/1.121689
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- High-temperature stimulated emission in optically pumped InGaN/GaN multiquantum wellsApplied Physics Letters, 1998
- High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN SubstratesJapanese Journal of Applied Physics, 1998
- Dislocation density reduction via lateral epitaxy in selectively grown GaN structuresApplied Physics Letters, 1997
- Study of surface-emitted stimulated emission in GaNApplied Physics Letters, 1997
- Fabrication of GaN Hexagonal Pyramids on Dot-Patterned GaN/Sapphire Substrates via Selective Metalorganic Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1995
- Above room temperature near ultraviolet lasing from an optically pumped GaN film grown on sapphireApplied Physics Letters, 1995
- Selective growth of wurtzite GaN and AlxGa1−xN on GaN/sapphire substrates by metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- Laser oscillations in the bound-excitonic region of CdSJournal of Applied Physics, 1984
- On approximate analytical solutions of rate equations for studying transient spectra of injection lasersIEEE Journal of Quantum Electronics, 1983
- Refractive index of GaNPhysica Status Solidi (a), 1971