An XPS Study of Blackening of Indium-Tin Oxide Film during Deposition of Dielectric Films by RF Magnetron Sputtering
- 1 July 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (7A), L1199-1200
- https://doi.org/10.1143/jjap.27.l1199
Abstract
The blackening phenomenon of an indium-tin oxide (ITO) film when Sr(Zr0.2Ti0.8)O3 dielectric film was deposited on it by the rf magnetron sputtering method has been examined by X-ray photoelectron spectroscopy. It was found that the blackening took place in the thin surface layer of the ITO film near the Sr(Zr0.2Ti0.8)O3/ITO interface and originated from preferential reduction of the Sn4+ ion to Sn0 rather than of In3+.Keywords
This publication has 2 references indexed in Scilit:
- X-ray photoelectron spectroscopy investigation of ion beam sputtered indium tin oxide films as a function of oxygen pressure during depositionJournal of Vacuum Science & Technology A, 1987
- RF Sputtering of Yttria on Indium Tin Oxide SubstratesJournal of the Electrochemical Society, 1981