New Bond-Charge Model for the Lattice Dynamics of Diamond-Type Semiconductors
- 5 August 1974
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 33 (6), 371-374
- https://doi.org/10.1103/physrevlett.33.371
Abstract
A new bond-charge model for phonons in semiconductors of diamond structure is presented. I show that the flattening of the transverse acoustic phonon branches in these materials can be understood by interactions involving the bond charges, when these move adiabatically. The phonon spectrum of Ge is calculated using only four parameters, all of which are physically meaningful, and very good agreement with experimental values is obtained.Keywords
This publication has 11 references indexed in Scilit:
- Lattice dynamics of highly polarizable homopolar crystals with diamond structurePhysica Status Solidi (b), 1972
- Phonon Dispersion Relations in Ge at 80 °KPhysical Review B, 1971
- Valence force potentials for calculating crystal vibrations in siliconJournal of Physics and Chemistry of Solids, 1971
- Dielectric Screening Model for Lattice Vibrations of Diamond-Structure CrystalsPhysical Review B, 1969
- Covalent Bond in Crystals. II. Partially Ionic BindingPhysical Review B, 1968
- Covalent Bond in Crystals. I. Elements of a Structural TheoryPhysical Review B, 1968
- Effect of Invariance Requirements on the Elastic Strain Energy of Crystals with Application to the Diamond StructurePhysical Review B, 1966
- Theory of the lattice vibrations of germaniumProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1959
- Lattice vibrational spectrum of germaniumJournal of Physics and Chemistry of Solids, 1959
- Normal Modes of Germanium by Neutron SpectrometryPhysical Review B, 1958