Photoreflectance of two-dimensional electron gas in the selectively doped GaAs/Al x Ga 1-x as heterostructure grown by molecular beam epitaxy
- 1 June 1987
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 4 (6), 283-285
- https://doi.org/10.1088/0256-307x/4/6/012
Abstract
Room temperature photoreflectance were made on a selectively doped GaAs/n-AlxGa1-xAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.Keywords
This publication has 3 references indexed in Scilit:
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- Photoreflectance study of GaAs/AlAs superlattices: Fit to electromodulation theoryApplied Physics Letters, 1986
- Photoreflectance Line Shape at the Fundamental Edge in Ultrapure GaAsPhysical Review B, 1970