Photoreflectance of two-dimensional electron gas in the selectively doped GaAs/Al x Ga 1-x as heterostructure grown by molecular beam epitaxy

Abstract

Room temperature photoreflectance were made on a selectively doped GaAs/n-Al_xGa_1-xAs two-dimensional electron gas grown by molecular beam epitaxy (MBE). The lineshapes can be made fit by Aspnes' theory, and the results explained with a simple model.